POWER RESISTORS: SWRPxx TO-220 20W, 25W, 30W, 35W, 50W, 60W silicon power resistors series encapsulated in TO 220 package, POWER RESISTORS USMRPF - Flanged Power Resistors on Al2O3 Alumina ceramic, AlN Aliminum Nitride, BeO Beryllium oxide substrate and POWER RESISTORS USMRP - Power Chip Resistors Al2O3 Alumina ceramic, AlN Aliminum Nitride, BeO Beryllium oxide substrate - high precision, high power, low inductance - thin film power resistors POWER RESISTORS MANUFACTURED BY SEMICONWELL: SWRPxx TO-220 20 Watts, 25 Watts, 30 Watts, 35 Watts, 50 Watts, 60 Watts power resistors series encapsulated in TO 220 package, high precision, high power, low inductance - thin film power resistors in the TO220 package are manufactured by depositing continuous and defect free metallic films conferring long-term stability, very low TCR, very low current noise and negligible non-linearity SWRPxxW TO220 series are high precision and high power resistors encapsulated in the TO-220 package. Power resistors are manufactured in 20W, 25W, 30W, 35W, 50W and 60W. Resistance element is electrically insulated from metal heat sink mounting tab. When properly mounted POWER RESISTORS SWRPxxW TO220 packaged power resistors provide up to 60 watts of steady state power. These very low inductance resistors are ideal for many industrial applications: power supplies, power controls and inrush/bleeder resistors. POWER RESISTORS thin film power resistors are manufactured by depositing continuous and defect free metallic films conferring long-term stability, very low TCR, very low current noise and negligible non-linearity. POWER RESISTORS thin film power resistors are price competitive while outperforming the thick film power resistors currently used in high power applications. TO-220 power resistors, TO 220 power thin film resistors, TO-220 package resistor provides up to 60 watts. POWER RESISTORS MANUFACTURED BY US MICROWAVES: USMRPF series of flanged power resistors are designed to be used as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flanged thin film power resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see USM app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available.
Features: Available on Al2O3 Alumina ceramic, AlN Aliminum Nitride, BeO Beryllium oxide substrate, High power dissipation while working up to GHz range frequencies, low insertion loss, low temperature coefficient, high reliability and ruggedness, wide operating temperature range, available mounting flange Copper - Nickel plated, Gold plated or Silver plated.
Applications: Microwave and RF high power terminations, resistive microwave power dividers, wilkinson power dividers, power attenuators, microwave power amplifiers. POWER RESISTORS MANUFACTURED BY US MICROWAVES: USMRP-AO Alumina (Al2O3) flange less power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flange less thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see USM app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available. Features: High power dissipation while working up to GHz range frequencies, low insertion loss, high reliability and ruggedness, small chip size with reduced stray capacitance per unit area, low temperature coefficient, wide operating temperature range. Applications: Microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers, power attenuators, microwave power amplifiers. POWER RESISTORS MANUFACTURED BY US MICROWAVES: USMRP-AN Aluminum Nitride (AlN) and USMRP-BO Beryllium Oxide (BeO) flange less power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flange less thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see USM app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available. Features: High power dissipation while working up to GHz range frequencies, low insertion loss, high reliability and ruggedness, small chip size with reduced stray capacitance per unit area, low temperature coefficient, wide operating temperature range. Applications: Microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers, power attenuators, microwave power amplifiers. POWER RESISTORS MANUFACTURED BY US MICROWAVES: USMRP-ANW Aluminum Nitride (AlN) and USMRP-BOW Beryllium Oxide (BeO) WRAPAROUND flange less power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flange less thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see USM app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available. Features: High power dissipation while working up to GHz range frequencies, low insertion loss, high reliability and ruggedness, small chip size with reduced stray capacitance per unit area, low temperature coefficient, wide operating temperature range. Applications: Microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers, power attenuators, microwave power amplifiers.

 

PRECISION POWER RESISTORS
PRECISION POWER RESISTORS: resistor-power logo TO220, Flanged Power Resistors and Power Chip Resistors Al2O3 Alumina ceramic, AlN Aliminum Nitride, BeO Beryllium oxide substrate DESIGNED AND MANUFACTURED FOR HIGH POWER
HIGH FREQUENCY AND MICROWAVE APPLICATION


 
 

TO-220 power resistor
SWRPxxW TO220 series are high precision and high power resistors encapsulated in the TO-220 package. Power resistors are manufactured in 20W, 25W, 30W, 35W, 50W and 60W. Resistance element is electrically insulated from metal heat sink mounting tab. When properly mounted Semiconwell's SWRPxxW TO220 packaged power resistors provide up to 60 watts of steady state power. These very low inductance resistors are ideal for many industrial applications: power supplies, power controls and inrush/bleeder resistors.
Thin film power resistors are manufactured by depositing continuous and defect free metallic films conferring long-term stability, very low TCR, very low current noise and negligible non-linearity.
Thin film power resistors are price competitive while outperforming the thick film power resistors currently used in high power applications. For more info as how thin film resistors compare with thick film resistors, see APPLICATION NOTE.

 

Flanged microwave power resistors on Al2O3 Alumina ceramic, AlN Aliminum Nitride, BeO Beryllium oxide substrate MANUFACTURED BY US MICROWAVES
USMRPF series of flanged power resistors are designed to be used as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flanged thin film power resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see USM app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available.
Features: Available on Al2O3 Alumina ceramic, AlN Aliminum Nitride, BeO Beryllium oxide substrate, high power dissipation while working up to GHz range frequencies, low insertion loss, low temperature coefficient, high reliability and ruggedness, wide operating temperature range, available mounting flange Copper - Nickel plated, Gold plated or Silver plated.
Applications: Microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers, power attenuators, microwave power amplifiers.

POWER CHIP RESISTORS ON Al2O3 ALUMINA microwave power resistors MANUFACTURED BY US MICROWAVES
USMRP-AO Alumina (Al2O3) flange less power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flange less thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see USM app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available. Features: High power dissipation while working up to GHz range frequencies, low insertion loss, high reliability and ruggedness, small chip size with reduced stray capacitance per unit area, low temperature coefficient, wide operating temperature range. Applications: Microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers, power attenuators, microwave power amplifiers.

POWER CHIP RESISTORS ON AlN ALUMINUM NITRIDE, BeO BERILLIUM OXIDE microwave power resistors MANUFACTURED BY US MICROWAVES
USMRP-AN Aluminum Nitride (AlN) and USMRP-BO Beryllium Oxide (BeO) flange less power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flange less thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see USM app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available. Features: High power dissipation while working up to GHz range frequencies, low insertion loss, high reliability and ruggedness, small chip size with reduced stray capacitance per unit area, low temperature coefficient, wide operating temperature range. Applications: Microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers, power attenuators, microwave power amplifiers.

WRAPAROUND POWER CHIP RESISTORS ON AlN ALUMINUM NITRIDE, BeO BERILLIUM OXIDE microwave power resistors MANUFACTURED BY US MICROWAVES
USMRP-ANW Aluminum Nitride (AlN) and USMRP-BOW Beryllium Oxide (BeO) WRAPAROUND flange less power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flange less thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see USM app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available. Features: High power dissipation while working up to GHz range frequencies, low insertion loss, high reliability and ruggedness, small chip size with reduced stray capacitance per unit area, low temperature coefficient, wide operating temperature range. Applications: Microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers, power attenuators, microwave power amplifiers.

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